sot-23(package) vds= 20v rds(on), vgs@ 4.5v, ids@ ? rds(on), vgs@ 2.5v, ids@ 2.0a package dimensions s g d maximum ratings and thermal characterist ics (ta = 25oc unless otherwise noted) ? 80m notes pulse width limited by maximum junction temperature. surface mounted on fr4 board, t 5 sec. 1) 3.0a 2) millimeter ref. min. max. ref. min. max. a 2.70 3.10 g 1.90 ref. b 2.40 2.80 h 1.00 1.30 c 1.40 1.60 k 0.10 0.20 d 0.35 0.50 j 0.40 - e 0 0.10 l 0.85 1.15 f 0.45 0.55 m 0 10 millimeter 70m f ea t u r es a d v an c ed t r en c h p r o c e ss t e c hno l o gy hi g h d en s i t y c e ll d e s i g n f o r ul t r a lo w o n - r e s i s t an ce hi g h p o w e r and c u rr en t hand i n g c apa b ili t y i dea l f o r l i i on b a tt e r y pa ck a pp li c a t i ons p a r a m e t er s y m b ol l i m it u n it dr a i n - s o u r c e v o l t a ge v ds 20 g a t e - s o u r c e v o l t a ge v gs 12 v c o n t i nu o u s dr a i n c u rr e nt i d 2 . 3 p u l s e d dr a i n c u rr e n t 1) i dm 8 a t a = 25 o c 1 . 25 m a x i m u m p o w e r d i ss i p a t i on t a = 75 o c p d 0.8 w o p e r a t i ng j un c t i o n a nd s t o r a g e t e m p e r a t u r e r a nge t j , t s tg - 55 t o 150 o c j un c t i o n - t o - a m b i e n t t h e r m a l r e s i s t a n c e ( p c b m o un t e d ) 2) r q ja 78 o c / w 1 date:2011/05 www.htsemi.com semiconductor jinyu 20v n-channel enhancement mode mosfet SI2300
electrical characteristics p a r a m e t er s t a t ic dr a i n - s o u r c e b r ea k d o w n v o l t a ge bv d ss v gs = 0 v , i d = 250u a 20 v dr a i n - s o u r c e o n - s t a t e r e s i s t a n ce r d s ( on) v gs = 2 . 5 v , i d = 2 . 0 a 70 . 0 80 . 0 dr a i n - s o u r c e o n - s t a t e r e s i s t a n ce r d s ( on) v gs = 4 . 5 v , i d = 3 . 0 a 60 . 0 70 . 0 m w g a t e t h r e s h o l d v o l t a ge v g s ( t h) v ds =v gs , i d = 250u a 0 . 6 0 . 76 v z e r o g a t e v o l t a g e dr a i n c u rr e n t 0 i d ss v ds = 20 v , v gs = 0 v 1 u a g a t e b o d y l ea k a ge i g ss v gs = 12 v , v ds = 0 v 100 n a f o r w a r d t r a n s c o ndu c t a n ce g fs v ds = 5 v , i d = 4. . 2 a s d y n a m ic 4) t o t a l g a t e c h a r ge q g 5.4 g a t e - s o u r c e c h a r ge q gs 0.65 g a t e -dr a i n c h a r ge q gd v ds = 10 v , i d = 3 . 6 a v gs = 4 . 5 v . n c t u r n - o n d e l a y t i me t d ( on) t u r n - o n r i s e t i me t r t u r n - o f f d e l a y t i me t d ( o ff) t u r n - o f f f a ll t i me t f v dd = 10 v , r g = 6 ! i d = 1 a , v gs = 4 . 5 v n s i npu t c a p a c i t a n ce c iss o u t pu t c a p a c i t a n c e c o ss r e v e r s e t r a n s f e r c a p a c i t a n ce c r ss v d s = 10 v , v gs = 0 v f = 1 . 0 m h z p f s o ur ce -d r a i n d i o de m a x . d i o d e f o r w a r d c u rr e n t i s a d i o d e f o r w a r d v o l t a g e v sd i s = 1 . 6 a , v gs = 0 v v symbol min. typ. miax. unit test condition 5 10 1 . 5 12 36 34 10 25 60 60 25 340 115 33 1 . 6 1 . 2 3) notes short duration test pulse used to minimize self-heating effect. pulse test pulse width =300us,duty cycle = 2%. 3) < < 4) (ta = 25oc unless otherwise noted) rl = 5.5 ! 2 date:2011/05 www.htsemi.com semiconductor jinyu 20v n-channel enhancement mode mosfet SI2300
- 3 - 0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 on-resistance vs. drain current output characteristics transfer characteristics v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d 0 2 4 6 8 10 012345 t c = 125 c 55 c 0, 0.5, 1 v v gs = 5 thru 2.5 v 1.5 v 2 v 0 200 400 600 800 1000 0 4 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 0 50 100 150 0 1 2 3 4 5 01234567 0 0.03 0.06 0.09 0.12 0.15 0246810 gate charge gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs c rss c oss c iss v ds = 10 v i d = 3.6 a on-resistance ( r ds(on) ) i d drain current (a) capacitance on-resistance vs. junction temperature v gs = 4.5 v i d = 3.6 a t j junction temperature ( c) (normalized) on-resistance ( r ds(on) ) v gs = 2.5 v v gs = 4.5 v 25 c 3 date:2011/05 www.htsemi.com semiconductor jinyu 20v n-channel enhancement mode mosfet SI2300
- 4 - 0.2 0.4 0.6 0.8 1.0 1.2 power (w) 0.4 0.3 0.2 0.1 0.0 0.1 0.2 50 0 50 100 150 0 0.04 0.08 0.12 0.16 0.20 02468 source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 2 1 0.1 0.01 10 4 10 3 10 2 10 1 1 normalized effective transient thermal impedance 30 on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) variance (v) v gs(th) 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 i d = 3.6 a i d = 250 a 10 1 10 t j = 25 c t j = 150 c 0.01 0.10 1.00 10.00 time (sec) t c = 25 c single pulse 14 12 8 4 0 2 6 10 4 date:2011/05 www.htsemi.com semiconductor jinyu 20v n-channel enhancement mode mosfet SI2300
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